Hoodi, Bangalore, Karnataka
- GST NO. : 29AABCU9740P1ZH
Monolayer Graphene on SiO₂/Si 90 nm
| Business Type | Manufacturer, Exporter, Supplier |
| Growth Method | CVD synthesis |
| Appearance (color) | Transparent |
| Transparency | > 97% |
| Click to view more | |
Preferred Buyer From
| Location | Anywhere in India |
Product Details
Coverage
> 98%
Number of Graphene Layers
1
Thickness (theoretical)
0.345 nm
Sheet Resistance on SiO₂/Si
450±40 Ohms/sq (1cm x1cm)
Grain size
Up to 20 μm
Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (90nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market – not only for its excellent quality, but also for its shape, size and number of applications.”
FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)
FET Electron Mobility on SiO₂/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802
Available Sizes:
- 6” Wafer
- 4” Wafer
- 10 mm x 10 mm
- 10 mm x 10 mm – Pack of 4
- 1 inch x 1 inch
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