Monolayer Graphene on SiO₂/Si 300 nm

Monolayer Graphene on SiO₂/Si 300 nm

MOQ : 50 Piece

Business Type Manufacturer, Exporter, Supplier
Growth method CVD synthesis
Appearance (color) Transparent
Transparency > 97%
Click to view more

Preferred Buyer From

Location Anywhere in India

Product Details

Coverage
> 95%
Number of graphene layers
1
Thickness (theoretical)
0.345 nm
Sheet Resistance on SiO₂/Si
450±40 Ohms/sq (1cm x1cm)
Grain size
Up to 20 μm

Processed in Clean Room Class 1000

Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market – not only for its excellent quality, but also for its shape, size and number of applications.”

 

FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)

 

FET Electron Mobility on SiO₂/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802

Yes! I am interested

Looking for "Monolayer Graphene on SiO₂/Si 300 nm" ?

Piece

Explore More Products


Raise your Query

Hi! Simply click below and type your query.

Our experts will reply you very soon.

WhatsApp Us