100 Piece (MOQ)

Business Type Manufacturer, Exporter, Supplier
Brand Name Ultrananotech
Condition New
Application Industrial, Laboratory
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Preferred Buyer From

Location Anywhere in India

Product Details

Feature
Durable, High Quality, Long Life
Country of Origin
India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 27
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %

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